(China (Mainland))
Product Summary
The SI1417EDH is a P-Channel 12-V (D-S) MOSFET.
Parametrics
SI1417EDH absolute maximum ratings: (1)Drain-Source Voltage VDS: -12V; (2)Gate-Source Voltage VGS: 12V; (3)Continuous Drain Current (TJ = 150C), TA = 25℃: -3.3 -2.7; TA = 85℃: -2.4 -1.9 A; (4)Pulsed Drain Current IDM: -8A; (5)Continuous Diode Current (Diode Conduction), IS: -1.4 to -0.9A; (6)Maximum Power Dissipation, TA = 85℃, PD: 0.81 to 0.52W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: -55 to 150 ℃.
Features
SI1417EDH features: (1)TrenchFET Power MOSFETS: 1.8-V Rated; (2)ESD Protected: 3000 V; (3)Thermally Enhanced SC-70 Package.
Diagrams
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Pricing (USD) |
Quantity | ||||||||||||||||
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 Si1417EDH |
Other |
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Data Sheet |
Negotiable |
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SI1417EDH-T1 |
Vishay/Siliconix |
MOSFET 12V 3.3A 1.56W 85 mohms @ 4.5V |
Data Sheet |
Negotiable |
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SI1417EDH-T1-E3 |
Vishay/Siliconix |
MOSFET 12V 3.3A 1.56W 85 mohms @ 4.5V |
Data Sheet |
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SI1417EDH-T1-GE3 |
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MOSFET P-CH 12V SC-70-6 |
Data Sheet |
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