Product Summary
The RB521ZS-30T2R is a 30V Schottky Barrier Diode. The application of it is Silicon epitaxial planar.
Parametrics
RB521ZS-30T2R absolute maximum ratings: (1)Forward current surge peak:500mA; (2)Junction temperature:150℃; (3)Storage temperature:-40℃ to +150℃; (4)Reverse voltage (DC):30V; (5)Average rectified forward current:100mA.
Features
RB521ZS-30T2R features: (1)Ultra small mold type(GMD2); (2)Low VF ; (3)High reliability.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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RB521ZS-30T2R |
ROHM Semiconductor |
Schottky (Diodes & Rectifiers) 30V 100mA; Sm Signal Schottky Barrier |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
RB520CS-30 |
Other |
Data Sheet |
Negotiable |
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RB520CS30L,315 |
NXP Semiconductors |
Schottky (Diodes & Rectifiers) REC 30V 1A 10pF |
Data Sheet |
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RB520CS-30T2R |
ROHM Semiconductor |
Schottky (Diodes & Rectifiers) SCHOTTKY BARRIER SURF. MOUNT |
Data Sheet |
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RB520G-30T2R |
ROHM Semiconductor |
Schottky (Diodes & Rectifiers) SCHOTTKY 30V 100MA |
Data Sheet |
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RB520CS-30-T2R |
Other |
Data Sheet |
Negotiable |
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RB520G-30 |
Other |
Data Sheet |
Negotiable |
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